Experimental and Computed Four Scattering and Four Noise Parameters of GaAs FET's Up to 4 GHz (Short Papers)

The four scattering parameters, operating in the pinch-off mode, of a Schottky-barrier-gate FET (MESFET) are investigated with the aid of an appropriate equivalent circuit. The dependence of the electron drift velocity on the electric field of the channel has been simplified to be piecewise linear by Turner and Wilson. Hot electron effects have therefore been neglected. The four noise parameters of the device have also been computed using the noise sources of van der Ziel. All computed parameters are compared with their measured values in the frequency region 0.5-4 GHz. Investigated GaAs FET's are commercial units.

[1]  A. van der Ziel,et al.  Thermal Noise in Field-Effect Transistors , 1962 .

[2]  M.J.O. Strutt,et al.  High-frequency FET noise parameters and approximation of the optimum source admittance , 1969 .

[3]  A. van der Ziel,et al.  Small-signal, high-frequency theory of field-effect transistors , 1964 .

[4]  A. Ziel.  Gate noise in field effect transistors at moderately high frequencies , 1963 .

[5]  W. Shockley,et al.  A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.

[6]  M. Strutt,et al.  Equivalent networks for three different microwave bipolar transistor packages in the 2--10 GHz range , 1971 .

[7]  M. Strutt,et al.  Computer-Aided Determination of the Small-Signal Equivalent Network of a Bipolar Microwave Transistor , 1972 .

[8]  M.J.O. Strutt,et al.  Experimental Gain and Noise Parameters of Microwave GaAs FET's in the L and S Bands (Short Papers) , 1973 .

[9]  P. L. Hower,et al.  Current saturation and small-signal characteristics of GaAs field-effect transistors , 1973 .

[10]  W. Baechtold,et al.  Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies , 1971 .

[11]  A. Gisolf,et al.  Lattice interaction noise of hot carriers in single injection solid state diodes , 1973 .

[12]  R. Cobbold,et al.  Theory and application of the field-effect transistor. Part 2: High-frequency properties , 1965 .

[13]  W. Baechtold,et al.  Noise behavior of GaAs field-effect transistors with short gate lengths , 1972 .

[14]  M. Strutt,et al.  Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f. , 1968 .