Implementation of a Gigabit Per Second Millimetre Wave Transceiver on CMOS

Modern systems require transceivers that deliver gigabit speeds, are smaller in size, and have lower power consumption and cost. This motivates research to develop transceiver-on-chip and transceiver-in-a-package technologies. Recent advances in millimetre wave electronics have meant that significant portions of the system can now be integrated onto a single substrate or package. In order to achieve low costs and high digital integration CMOS is the process of choice as CMOS is the standard and a cost effective process for building digital circuits. Unfortunately compared to other much more expensive processes such as SiGe and GaAs, CMOS has greater process variability, lower carrier mobility constants, and smaller device breakdown voltages. This makes millimetre wave wireless transceiver on a chip design particularly challenging. In this paper we outline the development of a gigabit transceiver-on-chip using CMOS and outline the performance of the fabricated components.

[1]  E. Skafidas,et al.  A 60-GHz CMOS Transmit/Receive Switch , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[2]  M.T. Yang,et al.  60-GHz PA and LNA in 90-nm RF-CMOS , 2006, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.

[3]  Robin J. Evans,et al.  Angle of Arrival Extended S-V Model for the 60 Ghz Wireless Desktop Channel , 2006, 2006 IEEE 17th International Symposium on Personal, Indoor and Mobile Radio Communications.

[4]  E. Skafidas,et al.  A 60-GHz Double-Balanced Gilbert Cell Down-Conversion Mixer on 130-nm CMOS , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[5]  R.W. Brodersen,et al.  Millimeter-wave CMOS design , 2005, IEEE Journal of Solid-State Circuits.

[6]  J. Laskar,et al.  RF-system-on-package (SOP) for wireless communications , 2002, IEEE Microwave Magazine.