论文信息 - Optoelectronic integration of ultrafast photoreceivers

Optoelectronic integration of ultrafast photoreceivers

The requirements on ultrafast photoreceivers are derived from system applications and several integration concepts are presented. Using a waveguide approach, both in the electrical and in the optical domain, high-speed and high-power operation can be achieved.

[1] W. Schlaak,et al. Narrow-band photoreceiver OEIC on InP operating at 38 GHz , 1998, IEEE Photonics Technology Letters.

[2] O. Nakajima,et al. 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier , 1998 .

[3] A. Umbach,et al. Waveguide integrated 1.55 /spl mu/m photodetector with 45 GHz bandwidth , 1996 .

[4] Luis M. Correia,et al. An overview of wireless broadband communications , 1997 .

[5] Y. Imai,et al. 0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC , 1995 .

[6] T. Nagatsuma,et al. 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength , 1994, IEEE Photonics Technology Letters.

[7] Ming C. Wu,et al. High-power high-speed photodetectors-design, analysis, and experimental demonstration , 1997 .

[8] R. Ludwig,et al. High-power performance of a high-speed photodetector , 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).

[9] J.E. Bowers,et al. Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product , 1995, IEEE Photonics Technology Letters.

[10] S. Chandrasekhar,et al. 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications , 1995, IEEE Photonics Technology Letters.