论文信息 - Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current - 字舞流文

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

A. Agarwal | P. McMarr | H. Hughes | K. Hobart | R. Stahlbush | S. Haney | F. Kub | M. Tadjer | E. Imhoff | H. Hughes