论文信息 - Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs

Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs

We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high cutoff frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.

[1] Masayuki Abe,et al. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment , 1989 .

[2] T. Enoki,et al. 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .

[3] S. Hiyamizu,et al. Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[4] M. Higashiwaki,et al. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency , 2001, IEEE Electron Device Letters.

[5] Toshiaki Matsui,et al. Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency , 2001 .

[6] Toshiaki Matsui,et al. Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency , 2002 .