论文信息 - 100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$ - 字舞流文

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$

J. Carlin | M. Gonschorek | E. Feltin | N. Grandjean | A. Alt | C. Bolognesi | Haifeng Sun | H. Benedickter