论文信息 - DEPENDENCE OF CARRIER LIFETIME AND RESISTIVITY ON ANNEALING IN INP GROWN BY HE-PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

DEPENDENCE OF CARRIER LIFETIME AND RESISTIVITY ON ANNEALING IN INP GROWN BY HE-PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700 °C.

M. Frankel | R. Esman | Jin-U. Kang | D. Thompson | B. Robinson

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