Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation

We report on the testing of a set of InAs/GaSb multicolor strained-layer superlattice photodetectors and Dotin- Well detectors grown with InAs dots in InGaAs/GaAs wells fabricated by the Center for High Technology Materials at the University of New Mexico. These devices are 2-color devices sensitive to near-IR and mid-IR wavelengths. The wavelength sensitivities of these devices are a function of the applied forward and reverse bias. We present measurements of the dark current and relative spectral response of these photodetectors measured at both cryogenic and room temperatures.