Semiconductor molecular‐beam epitaxy at low temperatures

Low‐temperature molecular‐beam epitaxy (MBE) in semiconductors is reviewed, with a focus on limited thickness epitaxy (LTE), the regime where crystalline growth over an epitaxial thickness hepi is followed by a transition to amorphous deposition. The goal is to summarize the main results on this phenomenon, make the connection to other results on low‐temperature MBE, and present the large body of unpublished data on hepi. Since the problem is still not fully understood, all available data that have a bearing on the understanding of the effect are outlined. The scientific questions and practical problems that have driven interest in low‐temperature growth are outlined, and the phenomenon of LTE and the dependence of hepi on the growth conditions are described. The LTE effect is apparently general, but Si(100) is the model system for which most data are available. Breakdown of epitaxy follows a universal curve that is inconsistent with continuous nucleation of the amorphous phase, implying that growth is tr...

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