论文信息 - Indium tin oxide ohmic contact to highly doped n-GaN

Indium tin oxide ohmic contact to highly doped n-GaN

Abstract The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN ( n =1×10 19 cm −3 ) without thermal annealing and the measured specific contact resistance was 5.1×10 −4 Ω cm 2 . This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN ( n =1×10 19 cm −3 ) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts.

[1] Michael S. Shur,et al. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C , 1995 .

[2] Y. Su,et al. High-transparency Ni/Au ohmic contact to p-type GaN , 1999 .

[3] M. Asif Khan,et al. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .

[4] Shuji Nakamura,et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime , 1997 .

[5] D. C. Grillo,et al. Indium tin oxide as transparent electrode material for ZnSe‐based blue quantum well light emitters , 1992 .

[6] Jinn-Kong Sheu,et al. Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN , 1998 .

[7] M. Jou,et al. Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes , 1994 .

[8] M. Asif Khan,et al. Schottky barrier photodetector based on Mg‐doped p‐type GaN films , 1993 .

[9] H. Morkoç,et al. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors , 1996 .