Synthesis, lattice structure, and band gap of ZnSnN_2

We report the synthesis of a direct gap semiconductor, ZnSnN 2 , by a plasma-assisted vapor–liquid–solid technique. Powder X-ray diffraction measurements of polycrystalline material yielded lattice parameters in good agreement with predicted values. Photoluminescence efficiency at room temperature was observed to be independent of excitation intensity between 10 3 and 10 8  W/cm 2 . The band gap was measured by photoluminescence excitation spectroscopy to be 1.7 ± 0.1 eV. The range of direct band gaps for the Zn(Si,Ge,Sn)N 2 alloys is now predicted to extend from 4.5 to 1.7 eV, opening up this little-studied family of materials to a host of important applications.

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