论文信息 - Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy

Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy

The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mum at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness

Y. Arakawa | N. Kumagai | K. Watanabe | S. Tsukamoto

[1] Joo-Heon Ahn,et al. High temperature performance of self-organised quantum dot laser with stacked p-doped active region , 2002 .

[2] Dennis G. Deppe,et al. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C , 2002 .

[3] R. Kopf,et al. Beryllium δ doping of GaAs grown by molecular beam epitaxy , 1990 .

[4] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .