Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters

Hot Carrier induced degradation is modeled using the carrier energy distribution function including Carrier-Carrier Scattering process. Silicon-hydrogen bond breakage through single particle and multiple particles interactions is considered in the modeling of the microscopic defect creation along the channel. Good agreement with lateral profile measurements is obtained for various stress conditions. The impact of the simulated defects distribution along the channel on the electrostatic and mobility (using remote coulomb scattering) is found in line with measurements.

[1]  Tibor Grasser,et al.  Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET , 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

[2]  M. Rafik,et al.  Mosfet's hot carrier degradation characterization and modeling at a microscopic scale , 2011, 2011 International Reliability Physics Symposium.

[3]  Tibor Grasser,et al.  Hot-carrier degradation caused interface state profile—Simulation versus experiment , 2011 .

[4]  I. Stárková.  Hot-carrier degradation caused interface state profile — Simulation versus experiment , 2011 .

[5]  Pierpaolo Palestri,et al.  On the accuracy of current TCAD hot carrier injection models in nanoscale devices , 2010 .

[6]  M. Rafik,et al.  Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs , 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.

[7]  I. Starkov,et al.  Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations , 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[8]  Nicolas Planes,et al.  Managing SRAM reliability from bitcell to library level , 2010, 2010 IEEE International Reliability Physics Symposium.

[9]  Luca Selmi,et al.  A Simulation Study of the Punch-Through-Assisted Hot Hole Injection Mechanism for Nonvolatile Memory Cells , 2010, IEEE Transactions on Electron Devices.

[10]  F. M. Bufler,et al.  Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation , 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

[11]  Vincent Huard,et al.  General framework about defect creation at the Si∕SiO2 interface , 2009 .

[12]  Fernando Guarin,et al.  Role of E-E scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high V/sub GS/ conditions , 2001 .

[13]  Steve S. Chung,et al.  A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs , 1996 .

[14]  W. Weber,et al.  Hot-carrier degradation monitoring in LDD n-MOSFETs using drain gated-diode measurements , 1991, European Solid-State Device Research Conference.

[15]  Patrick M. Lenahan,et al.  Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .