Understanding and reducing deleterious defects in the metastable alloy GaAsBi
暂无分享,去创建一个
D. Morgan | T. Kuech | G. Luo | G. Jenness | Shujiang Yang | Zhewen Song
[1] P. Mooney,et al. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination , 2016 .
[2] E. O’Reilly,et al. Optical gain in GaAsBi/GaAs quantum well diode lasers , 2016, Scientific Reports.
[3] A. Krotkus,et al. Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers , 2015 .
[4] D. Morgan,et al. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix , 2015 .
[5] K. Volz,et al. Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics , 2015 .
[6] D. Morgan,et al. First-principles studies on molecular beam epitaxy growth of GaAs_{1 − x}Bi_{x} , 2015 .
[7] K. Kokko,et al. Does Bi form clusters in GaAs1 − xBi x alloys? , 2014 .
[8] I. Marko,et al. Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi , 2014 .
[9] M. Yoshimoto,et al. Electrically pumped room-temperature operation of GaAs1−xBix laser diodes with low-temperature dependence of oscillation wavelength , 2014 .
[10] J. Puustinen,et al. Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi , 2014, Nanotechnology.
[11] G. Kresse,et al. First-principles calculations for point defects in solids , 2014 .
[12] J. David,et al. Molecular beam epitaxy growth of GaAsBi using As2 and As4 , 2014 .
[13] Tam Mayeshiba,et al. Elemental vacancy diffusion database from high-throughput first-principles calculations for fcc and hcp structures , 2014 .
[14] K. Oe,et al. Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy , 2013 .
[15] Handong Li,et al. Bismuth-Containing Compounds , 2013 .
[16] Stephen J. Sweeney,et al. Band engineering in dilute nitride and bismide semiconductor lasers , 2012, 1208.6441.
[17] D. Morgan,et al. Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs , 2012 .
[18] A. Krotkus,et al. Photoluminescence investigation of GaAs1 − xBix/GaAs heterostructures , 2012 .
[19] A. Pasquarello,et al. Intrinsic defects in GaAs and InGaAs through hybrid functional calculations , 2012 .
[20] T. Tiedje,et al. How much room for BiGa heteroantisites in GaAs1−xBix? , 2011 .
[21] Alfredo Pasquarello,et al. Assessing the accuracy of hybrid functionals in the determination of defect levels: Application to the As antisite in GaAs , 2011 .
[22] K. Oe,et al. Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy , 2011 .
[23] P. Papoulias,et al. Gallium interstitial contributions to diffusion in gallium arsenide , 2011, 1101.1135.
[24] Andreas Höglund,et al. Density functional theory calculations of defect energies using supercells , 2009 .
[25] Tapio T. Rantala,et al. Beryllium doping of GaAs and GaAsN studied from first principles , 2009 .
[26] C. Freysoldt,et al. Fully ab initio finite-size corrections for charged-defect supercell calculations. , 2009, Physical review letters.
[27] A. Krotkus,et al. Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications , 2009 .
[28] N. Mousseau,et al. Self-vacancies in gallium arsenide: An ab initio calculation , 2004, cond-mat/0409246.
[29] E. Weber,et al. Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation , 2003 .
[30] G. Scuseria,et al. Hybrid functionals based on a screened Coulomb potential , 2003 .
[31] François Schiettekatte,et al. Molecular beam epitaxy growth of GaAs1−xBix , 2003 .
[32] O. Wada,et al. Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy , 2003 .
[33] S. Kurtz,et al. Interactions between nitrogen , hydrogen , and gallium vacancies in GaAs 1 À x N x alloys , 2003 .
[34] P. Papoulias,et al. First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy , 2002, 1101.1413.
[35] I. Gorczyca,et al. Influence of hydrostatic pressure on cation vacancies in GaN, AlN, and GaAs , 2002 .
[36] G. Henkelman,et al. A climbing image nudged elastic band method for finding saddle points and minimum energy paths , 2000 .
[37] Yang-Fang Chen,et al. Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas , 2000 .
[38] Kunishige Oe,et al. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy , 1998 .
[39] Kresse,et al. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.
[40] Michael R. Melloch,et al. The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs , 1996 .
[41] Haller,et al. Ga self-diffusion in GaAs isotope heterostructures. , 1996, Physical review letters.
[42] H. Fushimi,et al. The presence of isolated hydrogen donors in heavily carbon-doped GaAs , 1994 .
[43] T. Wosinski,et al. Transformation of native defects in bulk GaAs under ultrasonic vibration , 1994 .
[44] Y. Takeda,et al. Measurements of heat of formation of GaP, InP, GaAs, InAs, GaSb and InSb , 1994 .
[45] E. Haller,et al. Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies , 1993 .
[46] Jost,et al. Identification of the BiGa heteroantisite defect in GaAs:Bi. , 1993, Physical review. B, Condensed matter.
[47] Zhang,et al. Dopant and defect energetics: Si in GaAs. , 1993, Physical review. B, Condensed matter.
[48] Look,et al. New AsGa related center in GaAs. , 1993, Physical review letters.
[49] Saarinen,et al. Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy. , 1991, Physical review. B, Condensed matter.
[50] M. Gurioli,et al. Picosecond spectroscopy of hydrogenated MBE-GaAs , 1991 .
[51] Jansen,et al. Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them. , 1989, Physical review. B, Condensed matter.
[52] K. Shinozaki,et al. Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy , 1986 .
[53] Schlüter,et al. Binding and formation energies of native defect pairs in GaAs. , 1986, Physical review. B, Condensed matter.
[54] M. Schlüter,et al. Bistability and metastability of the gallium vacancy in GaAs: The actuator of EL2? , 1985, Physical review letters.
[55] M. Skowronski,et al. Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect , 1985 .
[56] Baraff,et al. Electronic structure, total energies, and abundances of the elementary point defedts in GaAs. , 1985, Physical review letters.
[57] G. Guillot,et al. Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs , 1984 .
[58] L. Ledebo,et al. Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs , 1984 .
[59] A. G. Milnes,et al. Impurity and Defect Levels (Experimental) in Gallium Arsenide , 1983 .
[60] M. Kamińska,et al. Passivation of the dominant deep level (EL2) in GaAs by hydrogen , 1982 .
[61] J. S. Blakemore. Semiconducting and other major properties of gallium arsenide , 1982 .
[62] E. Weber,et al. Identification of AsGa antisites in plastically deformed GaAs , 1982 .
[63] C. Kirkpatrick,et al. Infrared absorption of the 78‐meV acceptor in GaAs , 1982 .
[64] A. Stoneham. Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors , 1976 .
[65] J. C. Phillips,et al. Bonds and Bands in Semiconductors , 1970, Science.
[66] J. R. Manning,et al. Kinetics of Solute-Enhanced Diffusion in Dilute Face-Centered-Cubic Alloys , 1967 .
[67] A. S. Grove. Physics and Technology of Semiconductor Devices , 1967 .
[68] J. R. Manning. Correlation Factors for Impurity Diffusion. bcc, Diamond, and fcc Structures , 1964 .