论文信息 - Development of HBT structure to minimize parasitic elements - 字舞流文

Development of HBT structure to minimize parasitic elements

[1] O. Nakajima,et al. A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT's , 1992 .

[2] D.L. Miller,et al. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process , 1987, IEEE Electron Device Letters.

[3] Osaake Nakajima,et al. Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer , 1986 .

[4] Hao-Hsiung Lin,et al. Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design , 1985 .

[5] D.L. Miller,et al. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers , 1984, IEEE Electron Device Letters.