Voltage Dependence of the Optical Response of a Pseudomorphic HFET-Photodetector

A pseudomorphic HFET has been used as a photodetector. The optical response of such a device was measured in the frequency range from 100 kHz up to 10 GHz. The response of the HFET-photodetector showed a strong dependence on the applied drain-to-source bias voltage of the transistor. This behaviour is explained by an amplification of the primarily generated photocurrent by traps in the buffer layer of the transistor. The occupation time of these traps can strongly depend on the applied voltage.

[1]  P.R. Herczfeld,et al.  Internal photovoltaic effect in microwave devices , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[2]  A. Paolella,et al.  Analytical model for optically generated currents in GaAs MESFETs , 1992 .

[3]  P.A. Davies,et al.  Physically based circuit model of GaAs MESFET as an optical port for microwave systems , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[4]  L. G. Hipwood,et al.  Observation and mechanism of kink effect in depletion-mode AlGaAs/GaAs and AlGaAs/GaInAs HEMTs , 1989 .

[5]  I. Wolff,et al.  Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling technique , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[6]  G.J. Papaionannou,et al.  On the photoresponse of GaAs MESFET's: Backgating and deep traps effect , 1986, IEEE Transactions on Electron Devices.

[7]  L. G. Hipwood,et al.  Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTs , 1989 .

[8]  A. Paolella,et al.  Optical control of a digital phase shifter , 1990, IEEE International Digest on Microwave Symposium.

[9]  W. Bronner,et al.  Optical response of a pseudomorphic HFET photodetector up to 10 GHz , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[10]  C. Baack,et al.  GaAs m.e.s.f.e.t.: a high-speed optical detector , 1977 .

[11]  J. C. Bourgoin.  A Critical View of DX Models , 1990 .

[12]  Robert B. Darling.  Optical gain and large-signal characteristics of illuminated GaAs MESFET's , 1987 .

[13]  G. I. Haddad,et al.  Transparent emitter contact HBT's for direct optical injection locking of oscillators , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).