Investigating extreme ultraviolet radiation chemistry with first-principles quantum chemistry calculations

Abstract. In extreme ultraviolet (EUV) lithography, chemistry is driven by secondary electrons. A deeper understanding of these processes is needed. However, electron-driven processes are inherently difficult to experimentally characterize for EUV materials, impeding targeted material engineering. A computational framework is needed to provide information for rational material engineering and identification at a molecular level. We demonstrate that density functional theory calculations can fulfill this purpose. We first demonstrate that primary electron energy spectrum can be predicted accurately. Second, the dynamics of a photoacid generator upon excitation or electron attachment are studied with ab-initio molecular dynamics calculations. Third, we demonstrate that electron attachment affinity is a good predictor of reduction potential and dose to clear. The correlation between such calculations and experiments suggests that these methods can be applied to computationally screen and design molecular components of EUV material and speed up the development process.

[1]  Patrick P. Naulleau,et al.  Relative importance of various stochastic terms and EUV patterning , 2018 .

[2]  Amrit Narasimhan,et al.  Studying electron-PAG interactions using electron-induced fluorescence , 2016, SPIE Advanced Lithography.

[3]  Patrick Naulleau,et al.  Fundamental understanding of chemical processes in extreme ultraviolet resist materials. , 2018, The Journal of chemical physics.

[4]  Patrick P. Naulleau,et al.  Investigating EUV radiochemistry with condensed phase photoemission , 2019, Extreme Ultraviolet (EUV) Lithography X.

[5]  V. Barone,et al.  Quantum Calculation of Molecular Energies and Energy Gradients in Solution by a Conductor Solvent Model , 1998 .

[6]  O. Sǐnanoğlu,et al.  MANY-ELECTRON THEORY OF ATOMS AND MOLECULES. I. SHELLS, ELECTRON PAIRS VS MANY-ELECTRON CORRELATIONS , 1962 .

[7]  R. S. Mulliken Electronic Population Analysis on LCAO–MO Molecular Wave Functions. I , 1955 .

[8]  D. Frank Ogletree,et al.  Chapter 2 - Molecular excitation and relaxation of extreme ultraviolet lithography photoresists , 2016 .

[9]  Robert L. Brainard,et al.  Measuring extreme-ultraviolet secondary electron blur (Conference Presentation) , 2019, Advances in Patterning Materials and Processes XXXVI.

[10]  Alexander B. Pacheco Introduction to Computational Chemistry , 2011 .

[11]  Takahiro Kozawa,et al.  Analysis of acid yield generated in chemically amplified electron beam resist , 2006 .

[12]  J. Tully Molecular dynamics with electronic transitions , 1990 .

[13]  Takahiro Kozawa,et al.  Radiation and photochemistry of onium salt acid generators in chemically amplified resists , 2000, Advanced Lithography.

[14]  Takahiro Kozawa,et al.  Thermalization Distance of Electrons Generated in Poly(4-hydroxystyrene) Film Containing Acid Generator upon Exposure to Extreme Ultraviolet Radiation , 2011 .

[15]  Nigel P. Hacker,et al.  Photochemistry of triarylsulfonium salts , 1990 .

[16]  Peter M W Gill,et al.  Self-consistent field calculations of excited states using the maximum overlap method (MOM). , 2008, The journal of physical chemistry. A.

[17]  I. Lindau,et al.  Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103 , 1985 .

[18]  Alán Aspuru-Guzik,et al.  Advances in molecular quantum chemistry contained in the Q-Chem 4 program package , 2014, Molecular Physics.

[19]  H. Gray,et al.  Triphenylsulfonium topophotochemistry , 2018, Photochemical & photobiological sciences : Official journal of the European Photochemistry Association and the European Society for Photobiology.

[20]  W. Kohn,et al.  Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .

[21]  Robert L. Brainard,et al.  Electron trapping: a mechanism for acid production in extreme ultraviolet photoresists , 2018 .

[22]  S. Tagawa,et al.  Radiation Chemistry in Chemically Amplified Resists , 2010 .

[23]  Patrick Naulleau,et al.  Modeling of novel resist technologies , 2019, Advanced Lithography.

[24]  Toshiro Itani,et al.  Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248 nm and Dry/Wet 193 nm Resists , 2008 .

[25]  G. Gallup,et al.  ELECTRON ATTACHMENT ENERGIES OF THE DNA BASES , 1998 .

[26]  Jeff Strnad,et al.  Calculation of the energies of .pi.* negative ion resonance states by the use of Koopmans' theorem , 1994 .

[27]  Peter M W Gill,et al.  Self-consistent-field calculations of core excited states. , 2009, The Journal of chemical physics.

[28]  Dario L. Goldfarb,et al.  Acid generation efficiency: EUV photons versus photoelectrons , 2016, SPIE Advanced Lithography.

[29]  K. Burke,et al.  Rationale for mixing exact exchange with density functional approximations , 1996 .

[30]  Patrick Naulleau,et al.  The importance of inner-shell electronic structure for enhancing the EUV absorption of photoresist materials. , 2017, The Journal of chemical physics.