Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which uses a semi-insulating InP base structure current confinement layer formed by OMVPE. Pulsed threshold currents as low as 14 mA and median aging rate under 60°C, 3 mW per facet burn-in conditions of 1% per thousand hours have been measured. A bandwidth greater than 4 GHz and modulation at rates as high as 20 Gbit/s have been achieved.