Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy

Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP is the increased step velocity caused by the addition of Te. To test this hypothesis, the effects of growth rate and growth temperature on the disordering effect of Te were studied. The Te/III ratio in the vapor and the partial pressure of the P precursor, tertiarybutylphosphine, were kept constant. The behavior of Te incorporation is found to be unusual. The decrease with increasing temperature is consistent with Te acting as a volatile impurity. However, the Te incorporation is also found to be inversely proportional to the growth rate, a characteristic of nonvolatile dopants. A suggested solution to this apparent contradiction is that the Te, which accumulates at step edges, is not able to keep pace with th...

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