论文信息 - High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics - 字舞流文

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

E. Monroy | P. Ruterana | E. Alves | S. Pouget | S. Valdueza-Felip | K. Lorenz | E. Bellet-Amalric | M. Chauvat | A. N'unez-Cascajero | Y. Wang