Dc and ac small signal electronic transport in ZnTe-ZnSe structures grown by molecular beam epitaxy

Results of dc and ac small signal electronic transport study of ZnTe/ZnSe heterostructures grown by molecular beam epitaxy are presented. The small signal admittance characteristics of these heterostructures show certain distinct features which are located at a bias point dependent on the interfaces. From the bias location of these features, the interfaces barrier height in ZnTe/ZnSe heterostructures is found to be 0.6 +/- 0.1 eV for electrons injected into ZnSe.