论文信息 - Physical Modeling of Defects, Dopant Activation and Diffusion in Aggressively Scaled Bulk and SOI Devices: Atomistic and Continuum Approaches - 字舞流文

Physical Modeling of Defects, Dopant Activation and Diffusion in Aggressively Scaled Bulk and SOI Devices: Atomistic and Continuum Approaches

Victor Moroz | Ignacio Martin-Bragado

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