Structural properties of Si nanoclusters produced by thermal annealing of SiO x films

[1]  F. Priolo,et al.  Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films , 2004 .

[2]  Lorenzo Pavesi,et al.  Dynamics of stimulated emission in silicon nanocrystals , 2003 .

[3]  Maria Miritello,et al.  Excitation and de-excitation properties of silicon quantum dots under electrical pumping , 2002 .

[4]  I. Pelant,et al.  Stimulated emission in blue-emitting Si+-implanted SiO2 films? , 2002 .

[5]  F. Priolo,et al.  Electroluminescence of silicon nanocrystals in MOS structures , 2002 .

[6]  M. Räsänen,et al.  Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses , 2001 .

[7]  Luca Dal Negro,et al.  Optical gain in silicon nanocrystals , 2000, Nature.

[8]  A. Nassiopoulou,et al.  Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers , 2000 .

[9]  Fabio Iacona,et al.  Correlation between luminescence and structural properties of Si nanocrystals , 2000 .

[10]  J. Linnros,et al.  Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide , 1998 .

[11]  K. D. Hirschman,et al.  Silicon-based visible light-emitting devices integrated into microelectronic circuits , 1996, Nature.

[12]  M. J. Kim,et al.  The composition and structure of SIPOS: A high spatial resolution electron microscopy study , 1993 .

[13]  H. R. Philipp,et al.  Optical and bonding model for non-crystalline SiOx and SiOxNy materials , 1972 .