Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

1 School of Electronics Engineering, 2 School of Electrical Engineering and Computer Science, Kyungpook National University, 1370, Sankyuk-dong, Buk-gu, Daegu 702-701, Republic of Korea 3 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA 4 Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea Phone: +82-53-950-5513 Fax : +82-53-950-5505 E-mail: imkang@ee.knu.ac.kr