论文信息 - Improving single-mode VCSEL performance by introducing a long monolithic cavity

Improving single-mode VCSEL performance by introducing a long monolithic cavity

We report on the improvement of several selectively oxidized vertical-cavity surface emitting laser characteristics by introducing a long monolithic cavity. The samples compared are grown with various cavity lengths using solid-source MBE. The 980 nm-regime is chosen as emission wavelength to facilitate growth by using binary GaAs cavity spacers. A record high single-transverse mode output power of 5 mW at a series resistance of 98 /spl Omega/ is obtained for a 7-/spl mu/m aperture device with a 4-/spl mu/m cavity spacer. Using an 8-/spl mu/m cavity spacer, devices up to 16-/spl mu/m aperture diameter emit 1.7 mW of single-mode power with a full-width at half-maximum far-field angle below 3.8/spl deg/.

[1] Martin Grabherr,et al. Comparison of Proton Implanted and Selectively Oxidized Vertical-Cavity Surface-Emitting Lasers , 1996 .

[2] Kent D. Choquette,et al. Cavity Characteristics of Selectively Oxidized Vertical-Cavity Lasers , 1995, Quantum Optoelectronics.

[3] D. Deppe,et al. Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .

[4] Diana L. Huffaker,et al. High spatial coherence vertical-cavity surface-emitting laser using a long monolithic cavity , 1997 .

[5] H. J. Unold,et al. Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief , 1999 .

[6] Rainer Michalzik,et al. 12.5 Gbit/s data rate fiber transmission using single-mode selectively oxidized GaAs VCSELs at /spl lambda/=850 nm , 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).