0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs
暂无分享,去创建一个
Barry R. Allen | K. L. Tan | D. C. Streit | M. Biedenbender | J. Lee | M. Hoppe | Richard Lai | P. H. Liu
[1] R. Lai,et al. Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT , 1993, IEEE Microwave and Guided Wave Letters.
[2] R. Kasody,et al. A Ka-band HEMT MMIC 1 watt power amplifier , 1993, IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
[3] R. Lai,et al. A high power and high efficiency monolithic power amplifier at V-band using pseudomorphic HEMTs , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
[4] G. S. Dow,et al. Ka-band power PHEMT on-wafer characterization using prematched structures , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.
[5] M. V. Aust,et al. A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers , 1993, 15th Annual GaAs IC Symposium.
[6] D. Bosch,et al. Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications , 1995 .