Precursor selection for plasma deposited fluorinated amorphous carbon films

[1]  K. Endo.  Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric , 1997 .

[2]  Masao Yamada,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Fluorocarbon Films with High Thermal Resistance and Low Dielectric Constants , 1997 .

[3]  K. Seaward,et al.  Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition , 1997 .

[4]  K. Endo,et al.  Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition , 1996 .

[5]  T. Tatsumi,et al.  Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics , 1996 .

[6]  Karen K. Gleason,et al.  Growth of fluorocarbon polymer thin films with high CF2 fractions and low dangling bond concentrations by thermal chemical vapor deposition , 1996 .

[7]  Toshihiko Baba,et al.  Fabrication and photoluminescence studies of GaInAsP/InP 2-dimensional photonic crystals , 1996 .

[8]  D. Kumar,et al.  Fluorocarbon Films from Plasma Polymerization of Hexafluoropropylene and Hydrogen , 1996 .

[9]  T. Tatsumi,et al.  Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition , 1995 .

[10]  R. E. Sah,et al.  Amorphous carbon coatings prepared by high rate rf plasma deposition from fluorinated benzenes , 1985 .

[11]  N. N. Greenwood,et al.  Chemistry of the elements , 1984 .