Infrared characterization of UV laser‐induced silicon oxide films

Oxygen incorporation and subsequent oxidation of ion‐implanted silicon have been performed using repetitive pulsed excimer laser irradiation working in the liquid phase regime. The kinetics of the oxidation and the characterization of the grown SiO2 were investigated by infrared spectroscopy. The origin of the broadening of the Si‐O stretching band of these oxides grown from the liquid phase is discussed.

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