Predicting yield using model based OPC verification: calibrated with electrical test data
暂无分享,去创建一个
[1] G. Yeric,et al. Development and Use of Small Addressable Arrays for Process Window Monitoring in 65nm Manufacturing , 2007, 2007 IEEE International Conference on Microelectronic Test Structures.
[2] P. Niedermaier,et al. Structural failure prediction using simplified lithography simulation models , 2007, SPIE Advanced Lithography.
[3] Dragos Dudau,et al. Dense OPC and verification for 45nm , 2006, SPIE Advanced Lithography.
[4] Christopher P. Ausschnitt,et al. Distinguishing dose, focus, and blur for lithography characterization and control , 2007, SPIE Advanced Lithography.
[5] Lars W. Liebmann,et al. Lithography simulation in DfM: achievable accuracy versus requirements , 2007, SPIE Advanced Lithography.
[6] Edward W. Conrad,et al. Model-based verification for first time right manufacturing , 2005, SPIE Advanced Lithography.
[7] Yu Cao,et al. Predictive focus exposure modeling (FEM) for full-chip lithography , 2006, SPIE Advanced Lithography.
[8] M. Hall,et al. A 65nm random and systematic yield ramp infrastructure utilizing a specialized addressable array with integrated analysis software , 2006, 2006 IEEE International Conference on Microelectronic Test Structures.
[9] Soo Muay Goh,et al. Hardware verification of litho-friendly design (LfD) methodologies , 2007, SPIE Advanced Lithography.
[10] Lars Liebmann,et al. Reducing DfM to practice: the lithography manufacturability assessor , 2006, SPIE Advanced Lithography.