论文信息 - Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire - 字舞流文

Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire

T. Ma | S. Chang | M. Bhuiyan | J. Lee | C. Won | H. W. Jung | M. Shin | J.-W. Lim | J. Lim | H. W. Jung