Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations have revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves of GaN(0002) and GaN(10-12) are 190.1 and 210.2 arcsec, respectively, indicating that high crystalline quality GaN films have been obtained. The scanning electron microscopy and atomic force microscopy measurements have shown the very smooth p-GaN surface with the surface root-mean-square (RMS) roughness of 1.3 nm. The measurements of low-temperature and room-temperature photoluminescence help to calculate the internal quantum efficiency of 79.0%. The as-grown GaN-based LED wafers have been made into LED chips with the size of 300 × 300 μm2 by the standard process. The forward voltage, the light output power and the external quantum efficiency for LED chips are 19.6 W, 2.78 V, and 40.2%, respectively, at a current of 20 mA. These results reveal the high optoelectronic properties of GaN-based LEDs on LSAT substrates. This work brings up a broad future application of GaN-based devices.

[1]  Yik-Khoon Ee,et al.  Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[2]  Ronald A. Arif,et al.  Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes , 2007 .

[3]  Shizhong Zhou,et al.  Enhance Light Emitting Diode Light Extraction Efficiency by an Optimized Spherical Cap-Shaped Patterned Sapphire Substrate , 2013 .

[4]  Wenliang Wang,et al.  Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates , 2014 .

[5]  Michelle A. Moram,et al.  X-ray diffraction of III-nitrides , 2009 .

[6]  C. Weisbuch,et al.  Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection , 2011 .

[7]  Hui Yang,et al.  Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates , 2014 .

[8]  Green Emission from a Strain-Modulated InGaN Active Layer , 2012 .

[9]  Qizhang Huang,et al.  Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction , 2003 .

[10]  Hui Yang,et al.  Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates , 2013 .

[11]  N. B. Smirnov,et al.  Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth , 2009 .

[12]  Chih-Min Chuang,et al.  Piezoelectric effects in the optical properties of strained InGaN quantum wells , 1999 .

[13]  Yik-Khoon Ee,et al.  Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire , 2010 .

[14]  H. Koinuma,et al.  Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE , 2001 .

[15]  K. Delaney,et al.  Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .

[16]  Wenliang Wang,et al.  Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition , 2014 .

[17]  Wen-Chau Liu,et al.  Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates. , 2010, Optics express.

[18]  Nelson Tansu,et al.  Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. , 2011, Optics express.

[19]  Wenliang Wang,et al.  A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers , 2014 .

[20]  Jeng-Jie Huang,et al.  X-ray diffraction study on an InGaN∕GaN quantum-well structure of prestrained growth , 2007 .

[21]  Baoping Zhang,et al.  Efficient hole transport in asymmetric coupled InGaN multiple quantum wells , 2009 .

[22]  Xiaojuan Sun,et al.  Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD , 2012, Nanoscale Research Letters.

[23]  Wenliang Wang,et al.  Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes , 2014 .

[24]  Ab Initio Calculations of the Structural and Electronic Properties of Ca2La3Sb3O14 Weberite at Ambient and Elevated Hydrostatic Pressure , 2014 .

[25]  Chel-Jong Choi,et al.  Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate , 2013 .

[26]  B. Hahn,et al.  GaN-Based LEDs and Lasers on SiC , 2000 .

[27]  Yongliang Shao,et al.  Growth of high quality GaN on a novel designed bonding-thinned template by HVPE , 2012 .

[28]  S. Denbaars,et al.  Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays , 2013 .

[29]  Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres , 2013, Scientific reports.

[30]  Wenliang Wang,et al.  Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition , 2014 .

[31]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[32]  S. Denbaars,et al.  Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting , 2013, Journal of Display Technology.

[33]  Shuji Nakamura,et al.  Measurement of electron overflow in 450 nm InGaN light-emitting diode structures , 2009 .

[34]  D. Fu,et al.  Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates , 2007 .

[35]  E. Talik,et al.  XPS studies of chemically etched surfaces of (La,Sr)(Al,Ta)O3 single crystals , 2003 .

[36]  K. Kumakura,et al.  Layered boron nitride as a release layer for mechanical transfer of GaN-based devices , 2012, Nature.

[37]  M.H. Crawford,et al.  LEDs for Solid-State Lighting: Performance Challenges and Recent Advances , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[38]  H. Fujioka,et al.  Field-effect transistors based on cubic indium nitride , 2014, Scientific Reports.

[39]  T. Martin,et al.  Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates , 2011 .

[40]  S. Denbaars,et al.  High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration , 1999 .

[41]  Shi You,et al.  Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire , 2011 .

[42]  D. Greve,et al.  Inversion of wurtzite GaN(0001) by exposure to magnesium , 1999 .

[43]  H. Fujioka,et al.  Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering , 2014, Scientific Reports.

[44]  James H. Edgar,et al.  Substrates for gallium nitride epitaxy , 2002 .

[45]  T. Łukasiewicz,et al.  New oxide crystal (La,Sr)(Al,Ta)O3 as substrate for GaN epitaxy , 2002 .

[46]  Yongliang Shao,et al.  Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy , 2014 .

[47]  V. Nevolin,et al.  SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES , 2008 .

[48]  Yik-Khoon Ee,et al.  III-Nitride Photonics , 2010, IEEE Photonics Journal.

[49]  Wenliang Wang,et al.  Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6 substrates , 2014 .

[50]  Growth and Characterization of (La,Sr)(Al,Ta)O3 Single Crystals: a Promising Substrate for GaN Epitaxial Growth , 2001 .