Lower BW and its impact on the patterning performance

Patterning solutions based on ArF immersion lithography are the fundamental enablers of device scaling. In order to meet the challenges of industry technology roadmaps, tool makers in the DUV lithography area are continuously investigating all of the interactions between equipment parameters and patterning in order to identify potential margins of improvement. Cymer, a light source manufacturer, is fully involved and is playing a crucial role in these investigations. As demonstrated by recent studies[1], a significant improvement to multiple patterning solutions can be achieved by leveraging light source capabilities. In particular, bandwidth is a key knob that can be leveraged to improve patterning. While previous publications[1,2] assessed contrast loss induced by increased bandwidth, this work will expand the research in the opposite direction and will investigate how patterning can be affected by improved image contrast achieved through a reduction in bandwidth. The impact of lower bandwidth is assessed using experimental and simulation studies and provide persuasive results which suggest continued studies in this area.

[1]  Christopher P. Ausschnitt,et al.  Laser bandwidth and other sources of focus blur in lithography , 2006, SPIE Advanced Lithography.

[2]  Jan Baselmans,et al.  Optimum ArFi laser bandwidth for 10nm node logic imaging performance , 2015, Advanced Lithography.

[3]  P. Bisschop,et al.  Impact of finite laser bandwidth on the critical dimension of L/S structures , 2008 .

[4]  Joost Bekaert,et al.  Improving on-wafer CD correlation analysis using advanced diagnostics and across-wafer light-source monitoring , 2014, Advanced Lithography.

[5]  Paolo Alagna,et al.  Advanced process characterization using light source performance modulation and monitoring , 2015, Advanced Lithography.

[6]  Nigel R. Farrar,et al.  Defining a physically accurate laser bandwidth input for optical proximity correction (OPC) and modeling , 2008, Photomask Technology.

[7]  Nigel R. Farrar,et al.  Modeling and performance metrics for longitudinal chromatic aberrations, focus-drilling, and Z-noise: exploring excimer laser pulse-spectra , 2007, SPIE Advanced Lithography.

[8]  Will Conley,et al.  Impact of bandwidth on contrast sensitive structures for low k1 lithography , 2015, Advanced Lithography.

[9]  Michiel Kupers,et al.  Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography , 2010, Advanced Lithography.

[10]  Gijsbert Rispens,et al.  Influence of etch process on contact hole local critical dimension uniformity in extreme-ultraviolet lithography , 2015, Advanced Lithography.

[11]  Lieve Van Look,et al.  Lithography imaging control by enhanced monitoring of light source performance , 2013, Advanced Lithography.