论文信息 - Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate - 字舞流文

Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate

C. P. Burrows | K. S. Coleman | S. Chattopadhyay | R. Mahapatra | N. Wright | A. Chakraborty | P. G. Coleman | N. Poolamai | P. Coleman