Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies

A novel drift region engineered stepped-drift LDMOSFET device in Freescale's 0.25mum smart power technology is reported for the first time. The specific on-resistance of the device is 0.33 mOmegamiddotcm2 at breakdown voltage of 59 V, the best reported data to date. SOA of the device has been improved up to 87% compared to its conventional counterpart