Frequency- and time-domain modeling tools for efficient RF/microwave transistor characterization

Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.

[1]  Don-Lin Yang,et al.  An efficient Fuzzy C-Means clustering algorithm , 2001, Proceedings 2001 IEEE International Conference on Data Mining.

[2]  Qi-Jun Zhang,et al.  Neural Networks for RF and Microwave Design , 2000 .

[3]  C. Huang.  Analysis of Multiconductor Transmission Lines with Nonlinear Terminations in Frequency Domain , 2005 .

[4]  Tatsuo Itoh,et al.  Inverted-gate field-effect transistors: novel high-frequency structures , 1988 .

[5]  Behzad Razavi.  Design Considerations for Future RF Circuits , 2007, 2007 IEEE International Symposium on Circuits and Systems.

[6]  S. El-Ghazaly,et al.  Electromagnetic wave effects on microwave transistors using a full-wave time-domain model , 1996 .

[7]  R.R. Tummala,et al.  The SOP for miniaturized, mixed-signal computing, communication, and consumer systems of the next decade , 2004, IEEE Transactions on Advanced Packaging.

[8]  S.M. El-Ghazaly,et al.  Large-signal circuit-based time domain analysis of high frequency devices including distributed effects , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[9]  Tatsuo Itoh,et al.  Traveling-wave inverted-gate field-effect transistors: concept, analysis, and potential , 1989 .

[10]  Allen Taflove,et al.  Computational Electrodynamics the Finite-Difference Time-Domain Method , 1995 .

[11]  M. Alci,et al.  A fuzzy-neural approach for the characterisation of the active microwave devices , 2002, 12th International Conference Microwave and Telecommunication Technology.

[12]  John Michael Golio.  Microwave MESFETs and HEMTs , 1991 .

[13]  Abdolali Abdipour,et al.  Complete sliced model of microwave FET's and comparison with lumped model and experimental results , 1996 .

[14]  H. Massler,et al.  A simplified broad-band large-signal nonquasi-static table-based FET model , 2000 .

[15]  C. Chiu,et al.  A Novel Model Extraction Algorithm for Reconstruction of Coupled Transmission Lines in High-speed Digital System , 2005 .

[16]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[17]  Aidin Taeb,et al.  Modeling and analysis of a nonlinear fully distributed FET using FDTD technique , 2007 .

[18]  S.M.M. Ibrahem,et al.  Small signal GaAs MESFET model parameters extracted from measured S-parameters , 1996, Thirteenth National Radio Science Conference. NRSC '96.

[19]  Roberto Menozzi,et al.  Small-signal modeling for microwave FET linear circuits based on a genetic algorithm , 1996 .

[20]  Fujiang Lin,et al.  FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept , 1994 .

[21]  Juan Obregon,et al.  A non‐linear and distributed modelling procedure of fets , 1993 .

[22]  A. Abdipour,et al.  Efficient numerical methods for simulation of high-frequency active devices , 2006, IEEE Transactions on Microwave Theory and Techniques.

[23]  Mustapha C. E. Yagoub,et al.  Fuzzy neural-based approaches for efficient RF-microwave transistor modeling , 2009 .