Characterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope
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Peng Wang | Xing Wu | Weida Hu | Chen Luo | Jianlu Wang | Guozhen Shen | Ziqi Sun | Xing Wu | G. Shen | Peng Wang | Weida Hu | Ziqi Sun | Jianlu Wang | Jiayan Zhang | C. Luo | Jiayan Zhang | Ye Yu | Ye Yu
[1] W. Lu,et al. Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared. , 2017, Small.
[2] K. Suenaga,et al. Atom-by-atom spectroscopy at graphene edge , 2010, Nature.
[3] Simon Kurasch,et al. Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. , 2012, Physical review letters.
[4] H. Sawada,et al. Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2. , 2016, ACS nano.
[5] D. Muller,et al. Janus monolayers of transition metal dichalcogenides. , 2017, Nature nanotechnology.
[6] J. Ho,et al. High‐Sensitivity Floating‐Gate Phototransistors Based on WS2 and MoS2 , 2016 .
[7] Haimei Zheng,et al. In Situ Study of Lithiation and Delithiation of MoS2 Nanosheets Using Electrochemical Liquid Cell Transmission Electron Microscopy. , 2015, Nano letters.
[8] M. G. Burke,et al. X-ray Energy-Dispersive Spectrometry During In Situ Liquid Cell Studies Using an Analytical Electron Microscope , 2014, Microscopy and Microanalysis.
[9] A. Krasheninnikov,et al. Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties. , 2012, The journal of physical chemistry letters.
[10] Hua Xu,et al. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. , 2015, Angewandte Chemie.
[11] W. Jie,et al. Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths. , 2018, Nanoscale.
[12] T. Mueller,et al. Solar-energy conversion and light emission in an atomic monolayer p-n diode. , 2013, Nature Nanotechnology.
[13] Yu-heng Zhang,et al. Direct imaging of magnetic field-driven transitions of skyrmion cluster states in FeGe nanodisks , 2016, Proceedings of the National Academy of Sciences.
[14] Jing Kong,et al. Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics. , 2016, Nano letters.
[15] B. Xiang,et al. Synthesis and Enhanced Electrochemical Catalytic Performance of Monolayer WS2(1–x)Se2x with a Tunable Band Gap , 2015, Advances in Materials.
[16] G. Bersuker,et al. Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale , 2018, 2018 China Semiconductor Technology International Conference (CSTIC).
[17] E. Wang,et al. High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices. , 2013, Nature nanotechnology.
[18] D. Muller,et al. Large-scale chemical assembly of atomically thin transistors and circuits. , 2016, Nature nanotechnology.
[19] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.
[20] Jing Guo,et al. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. , 2015, ACS nano.
[21] Xu Cui,et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. , 2013, ACS nano.
[22] Peng Zhou,et al. Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets. , 2016, ACS nano.
[23] Y. J. Zhang,et al. Electrically Switchable Chiral Light-Emitting Transistor , 2014, Science.
[24] M. Tang,et al. Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics , 2015, Advanced materials.
[25] S. Pantelides,et al. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. , 2014, Nano letters.
[26] Junsong Yuan,et al. Exploring atomic defects in molybdenum disulphide monolayers , 2015, Nature Communications.
[27] K. Shepard,et al. Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.
[28] E. Wang,et al. MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect , 2011, 1112.4013.
[29] T. Ren,et al. Fabrication techniques and applications of flexible graphene-based electronic devices , 2016 .
[30] Jian Zhang,et al. Metallic few-layered VSe2 nanosheets: high two-dimensional conductivity for flexible in-plane solid-state supercapacitors , 2018 .
[31] Liping Wang,et al. Atomic-Scale Probing of the Dynamics of Sodium Transport and Intercalation-Induced Phase Transformations in MoS₂. , 2015, ACS nano.
[32] F. Miao,et al. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions , 2017, Nature Communications.
[33] Marco Bernardi,et al. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. , 2013, Nano letters.
[34] Wei Chen,et al. Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers , 2013 .
[35] F. Libisch,et al. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction , 2014, Nano letters.
[36] Nan Wang,et al. Manganese Doping of Monolayer MoS2: The Substrate Is Critical. , 2015, Nano letters.
[37] Calvin Pei Yu Wong,et al. Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride. , 2018, Nano letters.
[38] P. Ajayan,et al. Nanomechanical cleavage of molybdenum disulphide atomic layers , 2014, Nature Communications.
[39] Jing Kong,et al. Intrinsic structural defects in monolayer molybdenum disulfide. , 2013, Nano letters.
[40] Kinam Kim,et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.
[41] A. M. van der Zande,et al. Atomically thin p-n junctions with van der Waals heterointerfaces. , 2014, Nature nanotechnology.
[42] Xing Wu,et al. Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices , 2015 .
[43] J. Shan,et al. Tightly bound trions in monolayer MoS2. , 2012, Nature materials.
[44] D. Tsai,et al. Monolayer MoS2 heterojunction solar cells. , 2014, ACS nano.
[45] S. Pantelides,et al. Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer. , 2015, ACS nano.
[46] Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions , 2014, 1408.3026.
[47] Weida Hu,et al. Room-Temperature Single-Photon Detector Based on Single Nanowire. , 2018, Nano letters.
[48] P. Jarillo-Herrero,et al. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. , 2013, Nature nanotechnology.
[49] P. Ajayan,et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. , 2014, Nano letters.
[50] R. Yu,et al. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. , 2015, Chemical Society reviews.
[51] Likai Li,et al. Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.
[52] Y. Chai,et al. Direct TEM observations of growth mechanisms of two-dimensional MoS2 flakes , 2016, Nature Communications.
[53] X. Duan,et al. Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes , 2014, Nano letters.
[54] Qi Liu,et al. Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects , 2018, Advanced science.
[55] Jun Lou,et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. , 2013, Nature materials.
[56] A. Splendiani,et al. Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.
[57] S. Lau,et al. 2D Layered Materials of Rare‐Earth Er‐Doped MoS2 with NIR‐to‐NIR Down‐ and Up‐Conversion Photoluminescence , 2016, Advanced materials.
[58] Nagarajan Raghavan,et al. Electrode material dependent breakdown and recovery in advanced high-κ gate stacks , 2010 .
[59] Lifeng Liu,et al. Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies , 2017, Advanced materials.
[60] Jonghwan Kim,et al. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping , 2018, Nature Communications.
[61] Wei Lu,et al. Surface Plasmon-Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays. , 2015, Small.
[62] M. Terrones,et al. Defect engineering of two-dimensional transition metal dichalcogenides , 2016 .
[63] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[64] S. Mahapatra,et al. Theoretical Insights to Niobium-Doped Monolayer MoS2–Gold Contact , 2015, IEEE Transactions on Electron Devices.
[65] Wang Yao,et al. Valley polarization in MoS2 monolayers by optical pumping. , 2012, Nature nanotechnology.
[66] G. Shen,et al. Photodetectors based on two dimensional materials , 2016 .
[67] P. Avouris,et al. Electroluminescence in single layer MoS2. , 2012, Nano letters.
[68] M. Seong,et al. Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure. , 2017, ACS nano.
[69] Boris I. Yakobson,et al. Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers , 2013 .
[70] A. Kis,et al. Nonvolatile memory cells based on MoS2/graphene heterostructures. , 2013, ACS nano.
[71] Weida Hu,et al. Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure. , 2017, ACS applied materials & interfaces.
[72] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .
[73] Madan Dubey,et al. Two-dimensional material nanophotonics , 2014, 1410.3882.
[74] Chunsen Liu,et al. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.
[75] L. Lauhon,et al. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. , 2014, ACS nano.
[76] Qing Hua Wang,et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.
[77] X. Duan,et al. Van der Waals heterostructures and devices , 2016 .
[78] Jun Lou,et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. , 2014, Nature materials.
[79] H-S Philip Wong,et al. Memory leads the way to better computing. , 2015, Nature nanotechnology.
[80] Peng Wang,et al. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors , 2018, Advanced Functional Materials.
[81] C. Hu,et al. Field-effect transistors built from all two-dimensional material components. , 2014, ACS nano.
[82] Pinshane Y. Huang,et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts , 2010, Nature.
[83] Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. , 2014, Nature communications.
[84] L. Ang,et al. Enhanced stability of filament-type resistive switching by interface engineering , 2017, Scientific Reports.
[85] W. Jie,et al. Luminescence in 2D Materials and van der Waals Heterostructures , 2018 .
[86] Noah D Bronstein,et al. Tracking Nanoparticle Diffusion and Interaction during Self-Assembly in a Liquid Cell. , 2017, Nano letters.
[87] Dong Wang,et al. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. , 2013, ACS nano.
[88] Timothy C. Berkelbach,et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. , 2013, Nature Materials.
[89] Yi Liu,et al. Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films , 2013, Scientific Reports.
[90] Yu Zhang,et al. Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures , 2018, Science Advances.
[91] Jiwon Jeon,et al. Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse. , 2014, ACS nano.
[92] Aaron M. Jones,et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. , 2013, Nature nanotechnology.
[93] Xing Wu,et al. Properties of graphene-metal contacts probed by Raman spectroscopy , 2018 .
[94] Ying-Sheng Huang,et al. Properties of individual dopant atoms in single-layer MoS2: atomic structure, migration, and enhanced reactivity. , 2014, Advanced materials.
[95] P. L. McEuen,et al. The valley Hall effect in MoS2 transistors , 2014, Science.
[96] Ole Bethge,et al. A microprocessor based on a two-dimensional semiconductor , 2016, Nature Communications.
[97] F. Guinea,et al. Enhanced superconductivity in atomically thin TaS2 , 2016, Nature Communications.
[98] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[99] C. Gu,et al. CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors. , 2014, Nanoscale.
[100] Tongtong Jiang,et al. CVD synthesis of Mo((1-x))W(x)S2 and MoS(2(1-x))Se(2x) alloy monolayers aimed at tuning the bandgap of molybdenum disulfide. , 2015, Nanoscale.
[101] Xing Wu,et al. In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene. , 2017, Small.
[102] J. Miyazaki,et al. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating , 2015, Scientific Reports.