论文信息 - Degradation of metal-oxide-semiconductor characteristics due to borophosphosilicate-glass reflow in O/sub 2/-containing ambient - 字舞流文

Degradation of metal-oxide-semiconductor characteristics due to borophosphosilicate-glass reflow in O/sub 2/-containing ambient

The authors report the effects of post-gate processing in an O/sub 2/-containing ambient ( >

G. Lo | D. Kwong | Sungjoo Lee

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