Effect of heating on the electrical and optical properties of tin disulphide thin films

Thin films of tin disulphide are prepared by reactive evaporation. It is shown that heating above 410K in vacuum reduces the resistivity of the as-prepared film by about ten orders of magnitude. Activation energies for conduction for both as-prepared and annealed films are determined. The refractive index and extinction coefficient are also determined.

[1]  J. George,et al.  Absorption edge measurements in tin disulphide thin films , 1982 .

[2]  O. N. Srivastava,et al.  Electronic bandgap measurements of SnS2 polytypes , 1979 .

[3]  R. Rntzsch,et al.  Hopping Conductivity of Undoped ZnSe Thin Films , 1979 .

[4]  M. J. Powell,et al.  The effect of pressure on the optical-absorption edge in SnS2 and SnSe2 , 1977 .

[5]  J. P. Fillard,et al.  Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure , 1977 .

[6]  J. Gasiot,et al.  A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film , 1976 .

[7]  A. Borghesi,et al.  Amorphous-to-crystalline transitions in GexSn1–xTe alloys: electrical and optical properties , 1976 .

[8]  L. Štourač,et al.  Electrical conductivity and photoconductivity of amorphous GeS layers , 1976 .

[9]  P. Lee,et al.  Electrical conduction mechanisms in tin disulphide , 1973 .

[10]  W. Spear,et al.  Electronic transport and state distribution in amorphous Si films , 1972 .

[11]  R. H. Tredgold,et al.  Electrical and photoconductive properties of SnS2 crystals , 1971 .

[12]  C. Kannewurf,et al.  Fundamental Optical Absorption in Sn S 2 and Sn Se 2 , 1966 .

[13]  T. Arai.  The Study of the Optical Properties of Conducting Tin Oxide Films and their Interpretation in Terms of a Tentative Band Scheme , 1960 .

[14]  W. Spitzer,et al.  Determination of Optical Constants and Carrier Effective Mass of Semiconductors , 1957 .