论文信息 - Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory - 字舞流文

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

J. Chen | L. Kong | Jianping Xu | S. Shi | Lan Li | Xiaosong Zhang | Jianghua Xu | Xue Zhou | Weihao Bian | Songyao Gao