A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM
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Nobuyuki Sugii | Toshitsugu Sakamoto | Takumi Hasegawa | Hiromitsu Hada | Yasuhiro Ogasahara | Keiichi Maekawa | Shiro Kamohara | Yukihide Tsuji | Munehiro Tada | Hideki Makiyama | Yoshiki Yamamoto | Shinobu Okanishi | Naoki Banno | Makoto Miyamura | Koichiro Okamoto | Noriyuki Iguchi | Hidekazu Oda | Yasushi Yamagata
[1] David Blaauw,et al. CAS-FEST 2010: Mitigating Variability in Near-Threshold Computing , 2011, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.
[2] Nobuyuki Sugii,et al. A 361nA thermal run-away immune VBB generator using dynamic substrate controlled charge pump for ultra low sleep current logic on 65nm SOTB , 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
[3] Toshitsugu Sakamoto,et al. Improved ON-State Reliability of Atom Switch Using Alloy Electrodes , 2013, IEEE Transactions on Electron Devices.
[4] T. Hiramoto,et al. Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 V utilizing adaptive back bias , 2013, 2013 Symposium on VLSI Circuits.
[5] Yasuhiro Ogasahara,et al. Utility of high on-off ratio, high off resistance rewritable device to EEPROM for ultra-low voltage operation of steep subthreshold slope FETs , 2014, 2014 IEEE 6th International Memory Workshop (IMW).
[6] Rabab Kreidieh Ward,et al. Energy Optimization for Many-Core Platforms: Communication and PVT Aware Voltage-Island Formation and Voltage Selection Algorithm , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[7] Hideharu Amano,et al. A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode , 2015 .
[8] K. Terabe,et al. Quantized conductance atomic switch , 2005, Nature.
[9] T. Hasegawa,et al. Nanometer-scale switches using copper sulfide , 2003 .
[10] Marcus Herzog,et al. An 82μA/MHz microcontroller with embedded FeRAM for energy-harvesting applications , 2011, 2011 IEEE International Solid-State Circuits Conference.
[11] N. Kasai,et al. Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[12] Meng-Fan Chang,et al. 19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[13] N. Banno,et al. On-state reliability of solid-electrolyte switch , 2008, 2008 IEEE International Reliability Physics Symposium.
[14] Nobuyuki Sugii,et al. Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V , 2014 .
[15] T. Sakamoto,et al. Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch , 2011, IEEE Transactions on Electron Devices.