RTN ${\bf V}_{{\bf T}}$ Instability From the Stationary Trap-Filling Condition: An Analytical Spectroscopic Investigation

This paper presents an analytical investigation of the spatial and energetic position of the traps responsible for threshold voltage random telegraph fluctuations in a metal-oxide-semiconductor device. Assuming a stationary trap-filling condition as a result of the application of a constant gate bias, a simple formula is obtained to identify the oxide region where traps having an arbitrary probability to change their state between two subsequent time instants are located. Results are extremely important for the statistical spectroscopic analysis of random telegraph noise sources.

[1]  J. A. López-Villanueva,et al.  Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures , 1997 .

[2]  G. Jung,et al.  Random telegraph noise analysis in time domain , 2000 .

[3]  S. Machlup,et al.  Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .

[4]  Andrea L. Lacaita,et al.  Modeling of SILC Based on Electron and Hole Tunneling — Part I : Transient Effects , 2000 .

[5]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[6]  A.L. Lacaita,et al.  Statistical Model for Random Telegraph Noise in Flash Memories , 2008, IEEE Transactions on Electron Devices.

[7]  A. Ghetti,et al.  A 65nm NOR flash technology with 0.042/spl mu/m/sup 2/ cell size for high performance multilevel application , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[8]  Andrea L. Lacaita,et al.  Modeling of SILC based on electron and hole tunneling. I. Transient effects , 2000 .

[9]  L.K.J. Vandamme,et al.  On the anomalous behavior of the relative amplitude of RTS noise , 1998 .

[10]  C.M. Compagnoni,et al.  Statistical Investigation of Random Telegraph Noise ID Instabilities in Flash Cells at Different Initial Trap-filling Conditions , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[11]  Andrew R. Brown,et al.  RTS amplitudes in decananometer MOSFETs: 3-D simulation study , 2003 .

[12]  Andrea L. Lacaita,et al.  Modeling of SILC based on electron and hole tunneling. II. Steady-state , 2000 .

[13]  A. Visconti,et al.  Defects spectroscopy in SiO2 by statistical random telegraph noise analysis , 2006, 2006 International Electron Devices Meeting.

[14]  K. Otsuga,et al.  The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories , 2006, 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..

[15]  P.K. Ko,et al.  Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.

[16]  Nuditha Vibhavie Amarasinghe,et al.  Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs , 2000 .