High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources
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Johann Peter Reithmaier | Alfred Forchel | S. Deubert | R. Debusmann | A. Forchel | J. Reithmaier | S. Deubert | R. Debusmann
[1] A. Forchel,et al. Improved carrier confinement in GaInAs/AlGaAs lasers by MBE grown short period superlattice quantum well barriers , 1999 .
[2] Mikhail V. Maximov,et al. High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system , 2005 .
[3] David T. D. Childs,et al. 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density , 2004 .
[4] Johann Peter Reithmaier,et al. High-power 980 nm quantum dot broad area lasers , 2003 .
[5] Johann Peter Reithmaier,et al. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers , 2000 .
[6] A. Stintz,et al. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser , 2000, IEEE Photonics Technology Letters.
[7] Johann Peter Reithmaier,et al. Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers , 2002 .
[8] Andreas Stintz,et al. Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .