A low power high gain-bandwidth E-band LNA

Powered by the availability of large fractional bandwidth, several Gbps communication is now possible at mm-wave with simple modulation schemes. Generation of high gain in a wide bandwidth is challenging as bandwidth usually trades-off with gain. This work presents the design of a high GBW E-band LNA in 130nm SiGe BiCMOS technology. Common emitter stages are stacked in a current-sharing configuration to allow low power consumption and coupled through third-order L-C band-pass networks to extend the bandwidth. In addition, the stages are stagger-tuned to maximize bandwidth and gain flatness. The LNA achieves flat frequency response with 22.5dB peak gain over a 3-dB bandwidth of 21.6GHz from 66.4-88GHz with 5.6dB average in-band noise figure and 14.4mW power consumption.

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