Systems, methods, and apparatuses for high power complementary metal oxide semiconductor cmos antenna switches using body switchting and substrate junction diode controlling in multistacking structure

One embodiment of the present invention provides a CMOS antenna switch, which can be referred to as a CMOS SPDT switch. According to an aspect of the invention, the CMOS antenna switch may contain operable at a plurality of frequencies, such as about 900 MHz, 1.9 GHz and 2.1 GHz, for example. The CMOS antenna switch may include a reception switch and the transmission switch. Wherein the receive switch, in order to, by preventing a channel formation of the device in the off-state blocking the high power signal from the transmission path and maintain a low insertion loss in the receive path, in parallel to the body substrate switching technique and body substrate switching technique source - It uses multiple transistor stack applying the body connection techniques. CMOS antenna switch according to an embodiment of the present invention, it is possible to provide a full-band P1dB of 35 dBm (e. G., 900 MHz, 1.9 GHz and 2.1 GHz). In addition, according to one embodiment of the present invention, it is possible to obtain a second and third harmonic of -60 dBc for an input power of 28 dBm for the switch. Complementary metal oxide semiconductor (CMOS), switches, antennas, transmit (Tx), reception (Rx), the leakage current, the insertion loss, isolation, power, harmonic