Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs

[1]  A Nishida,et al.  Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETs , 2011, IEEE Transactions on Electron Devices.

[2]  Tohru Mogami,et al.  Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method , 2010 .

[3]  A. Kumar,et al.  Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method , 2010, 2010 Symposium on VLSI Technology.

[4]  T. Hiramoto,et al.  Origin of “current-onset voltage” variability in scaled MOSFETs , 2010, 2010 Silicon Nanoelectronics Workshop.

[5]  A. Kumar,et al.  Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG , 2010, 2010 Silicon Nanoelectronics Workshop.

[6]  Akio Nishida,et al.  Verification of Threshold Voltage Variation of Scaled Transistors with Ultralarge-Scale Device Matrix Array Test Element Group , 2009 .

[7]  T. Hiramoto,et al.  Analysis of NMOS and PMOS Difference in $V_{T}$ Variation With Large-Scale DMA-TEG , 2009, IEEE Transactions on Electron Devices.

[8]  R. Rooyackers,et al.  First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling , 2008, 2008 IEEE International Electron Devices Meeting.

[9]  K. Takeuchi,et al.  Effects of drain bias on threshold voltage fluctuation and its impact on circuit characteristics , 2008, 2008 IEEE International Electron Devices Meeting.

[10]  T. Fukai,et al.  Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies , 2007, 2007 IEEE International Electron Devices Meeting.

[11]  K.J. Kuhn,et al.  Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS , 2007, 2007 IEEE International Electron Devices Meeting.

[12]  Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs , 2006, 2009 Symposium on VLSI Technology.

[13]  T. Numata,et al.  Physical understanding of Vth and Idsat variations in (110) CMOSFETs , 2006, 2009 Symposium on VLSI Technology.

[14]  Toshiro Hiramoto,et al.  Re-Examination of Impact of Intrinsic Dopant Fluctuations on Static RAM (SRAM) Static Noise Margin , 2005 .

[15]  V. Macary,et al.  Current mismatch due to local dopant fluctuations in MOSFET channel , 2003 .

[16]  Makoto Takamiya,et al.  Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs , 2000 .

[17]  A. Asenov.  Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .

[18]  Marcel J. M. Pelgrom,et al.  Matching properties of MOS transistors , 1989 .

[19]  C. Mead,et al.  Fundamental limitations in microelectronics—I. MOS technology , 1972 .

[20]  Alan Stuart,et al.  Statistics of extremes , 1960 .