Optimization of layered laser crystallization for thin-film crystalline silicon solar cells

Layered laser crystallization during PECVD of a-Si:H is a new and advantageous method to deposit c-Si films onto glass with a rate of 10 ( As � 1 . This new technology consists of two laserinduced crystal growth steps: A seed layer is prepared from a-Si:H by an overlapped scanning of an Ar + laser beam. Then the seed is repeatedly thickened by melting of newly deposited aSi:H on top of the c-Si with KrF laser pulses. Various deposition parameters were matched together to process a layer with crystallites 100mm in size. p + pn + -o r n + np + -junctions were deposited in one chamber and in one run. VOC of 530 mV was achieved. r 2002 Elsevier Science B.V. All rights reserved.

[2]  F. Falk,et al.  Laser Induced Crystallization of Amorphous Silicon Films on Glass for Thin Film Solar Cells , 1998 .

[3]  F. Falk,et al.  Defect population and electrical properties of Ar + -laser crystallized polycrystalline silicon thin films , 2000 .

[4]  F. Falk,et al.  A new technology for crystalline silicon thin film solar cells on glass based on laser crystallization , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

[5]  U. Zeimer,et al.  Homoepitaxial Growth of Si at Low Temperature (325 °C) , 1999 .

[6]  D. Ruby,et al.  Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[7]  N. D. Sinh,et al.  Photovoltaic properties of polycrystalline silicon films thickened by laser melting , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

[8]  N. H. Nickel,et al.  Step-by-step excimer laser induced crystallization of a-Si:H , 2000 .

[9]  P. Baeri,et al.  Laser annealing of silicon , 1996 .

[10]  R. Schindler,et al.  MC-silicon solar cells with >17% efficiency , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[11]  P. Leiderer,et al.  ON THE INTERPRETATION OF TIME-RESOLVED SURFACE REFLECTIVITY MEASUREMENTS DURING THE LASER ANNEALING OF SI THIN FILMS , 1998 .