Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector

In this work carrier transport mechanism in strain balanced SiGeSn/GeSn QWIP is studied to obtain the frequency response. Initially, a QWIP model is proposed in which a 76Å thick Ge0.83Sn0.17 layer is sandwiched between two tensile strained Si0.09Ge0.8 Sn0.11 layers to form a type-I single strain balanced quantum-well infrared photodetector (SQWIP). The rate equation in quantum well and continuity equation over the well are solved simultaneously to obtain frequency response. The 3dB bandwidth obtained from frequency response is evaluated as 47 GHz at zero bias which increased with the applied bias. Also, the effect of bias dependent escape rates of carrier from the quantum well on the 3dB bandwidth is studied.

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