Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation
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M. Weidner | G. Pensl | T. Frank | R. Krause-Rehberg | P. Sperr | W. Triftshäuser | A. Kawasuso | F. Redmann
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M. Weidner | G. Pensl | T. Frank | R. Krause-Rehberg | P. Sperr | W. Triftshäuser | A. Kawasuso | F. Redmann