Low Power Strategies for beyond Moore's Law Era: Low Power Device Technologies and Materials

Semiconductor industries are facing a lot of problems in designing the chips consist of transistors with less than 10nm technology. Moore’s law which predicted the scaling down of semiconductor devices has forced the researchers to look upon the devices in another aspect. So, various architectures and materials are invented to increase the reliability, speed and most importantly low power operation without increasing the size of devices. The on-set of nanotechnology and nano-science leads to unconventional 3D structure devices to and 0-dimensional structures. This chapter gives a general overview of the various technologies; materials and architectures researchers are concentrating to continue the technology beyond Moore’s law with low power consumption.

[1]  A. E. Wetsel,et al.  Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure. , 1988, Physical review letters.

[2]  Chun-Chen Yeh,et al.  Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications , 2011, IEEE Electron Device Letters.

[3]  A. Datta,et al.  Structures and chemical properties of silicene: unlike graphene. , 2014, Accounts of chemical research.

[4]  G. Dewey,et al.  Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing , 2011, 2011 International Electron Devices Meeting.

[5]  Anthony J. Kenyon,et al.  Resistive switching in silicon sub-oxide films , 2012 .

[6]  Madan Dubey,et al.  Silicene field-effect transistors operating at room temperature. , 2015, Nature nanotechnology.

[7]  Qin Zhang,et al.  Low-Voltage Tunnel Transistors for Beyond CMOS Logic , 2010, Proceedings of the IEEE.

[8]  Pablo A. Denis,et al.  Comparative Study of Defect Reactivity in Graphene , 2013 .

[9]  Angela M Belcher,et al.  Ordering of Quantum Dots Using Genetically Engineered Viruses , 2002, Science.

[10]  J. Fastenau,et al.  Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications , 2011, 2011 International Electron Devices Meeting.

[11]  N. Goldsman,et al.  Electron transport and full-band electron-phonon interactions in graphene , 2008 .

[12]  Narayan Srinivasa,et al.  A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. , 2012, Nano letters.

[13]  Moungi G. Bawendi,et al.  On the Absorption Cross Section of CdSe Nanocrystal Quantum Dots , 2002 .

[14]  E. Akturk,et al.  Two- and one-dimensional honeycomb structures of silicon and germanium. , 2008, Physical review letters.

[15]  G. Steele,et al.  Isolation and characterization of few-layer black phosphorus , 2014, 1403.0499.

[16]  S.C. Rustagi,et al.  High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices , 2006, IEEE Electron Device Letters.

[17]  G. Lay.  2D materials: Silicene transistors , 2015 .

[18]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[19]  Garrett S. Rose,et al.  Foundations of memristor based PUF architectures , 2013, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).

[20]  K. Novoselov,et al.  Detection of individual gas molecules adsorbed on graphene. , 2006, Nature materials.

[21]  Hao Yu,et al.  Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices , 2012, IEEE Transactions on Circuits and Systems I: Regular Papers.

[22]  V P Gusynin,et al.  Unconventional integer quantum Hall effect in graphene. , 2005, Physical review letters.

[23]  S. Samavedam,et al.  Analysis of parasitic resistance in double gate FinFETs with different fin lengths , 2011, IEEE 2011 International SOI Conference.

[24]  Abdelkader Kara,et al.  Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene , 2010 .

[25]  Luca Selmi,et al.  Quantum Mechanical Study of the Germanium Electron–Hole Bilayer Tunnel FET , 2013, IEEE Transactions on Electron Devices.

[26]  Sushanta K. Mandal,et al.  FGMOS Based Low-Voltage Low-Power High Output Impedance Regulated Cascode Current Mirror , 2013, VLSIC 2013.

[27]  Wei Zhang,et al.  Design Exploration of Hybrid CMOS and Memristor Circuit by New Modified Nodal Analysis , 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[28]  M. Saraniti,et al.  Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs , 2010, IEEE Electron Device Letters.

[29]  Z. Shao,et al.  Intrinsic carrier mobility of germanene is larger than graphene's: first-principle calculations , 2014 .

[30]  H. Hwang,et al.  Resistance switching of copper doped MoOx films for nonvolatile memory applications , 2007 .

[31]  SUPARNA DUTTASINHA,et al.  Graphene: Status and Prospects , 2009, Science.

[32]  P. Wallace.  The Band Theory of Graphite , 1947 .

[33]  B. Bishnoi,et al.  Spin transport in buckled bilayer silicene , 2014 .

[34]  Dae-Hyun Kim,et al.  Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications , 2010, IEEE Transactions on Electron Devices.

[35]  M.A. Brooke,et al.  A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process , 1991, IEEE Electron Device Letters.

[36]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[37]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[38]  Rohit Soni,et al.  Fundamental Issues and Problems in the Realization of Memristors , 2012 .

[39]  L. Chua.  Memristor-The missing circuit element , 1971 .

[40]  Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors. , 2013, Nanoscale.

[41]  Peng Li,et al.  Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.

[42]  Romain Wacquez,et al.  Few electron limit of n-type metal oxide semiconductor single electron transistors , 2012, Nanotechnology.

[43]  D. A. Antoniadis,et al.  Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors , 2013, IEEE Electron Device Letters.

[44]  Dapeng Yu,et al.  Tunable bandgap in silicene and germanene. , 2012, Nano letters.

[45]  S. Sze,et al.  A floating gate and its application to memory devices , 1967 .

[46]  M. E. Dávila,et al.  Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene , 2014, 1406.2488.

[47]  A. Zaslavsky,et al.  Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling , 2011 .

[48]  F. Corinto,et al.  Memristor Model Comparison , 2013, IEEE Circuits and Systems Magazine.

[49]  D. Norris.  Measurement and assignment of the size-dependent optical spectrum in cadmium selenide (CdSe) quantum dots , 1995 .

[50]  A. M. Ionescu,et al.  Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation , 2012, IEEE Electron Device Letters.

[51]  Peide D. Ye,et al.  Fundamentals of III-V Semiconductor MOSFETs , 2010 .

[52]  Vaidyanathan Subramanian,et al.  Multiple Gate Field-Effect Transistors for Future CMOS Technologies , 2010 .

[53]  Binghai Yan,et al.  Large-gap quantum spin Hall insulators in tin films. , 2013, Physical review letters.

[54]  S. Tam,et al.  An electrically trainable artificial neural network (ETANN) with 10240 'floating gate' synapses , 1990, International 1989 Joint Conference on Neural Networks.

[55]  Sung-Min Hong,et al.  Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters , 2015, IEEE Transactions on Terahertz Science and Technology.

[56]  Adrian M. Ionescu,et al.  The electron–hole bilayer tunnel FET , 2012 .

[57]  H.-S.P. Wong,et al.  Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[58]  J. B. Boos,et al.  Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs , 2010, IEEE Transactions on Nuclear Science.

[59]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[60]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.