论文信息 - Study of carrier lifetime of silicon by OPTP method

Study of carrier lifetime of silicon by OPTP method

To analyze the carrier lifetime of Si, a 0.4 mm thickness high-resistivity silicon had been investigated by the optical-pump-terahertz-probe (OPTP) system. The terahertz time domain curve and frequency spectrum (bandwidth of > 6THz) of Si are achieved by the time domain spectroscopy mode, and its characteristic parameters, including refractive index and absorption coefficient, were obtained. And the carrier lifetime of Si was measured by the OPTP mode, the result is about 905 ps.

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